DAMIA1100N100 MOSFET. Datasheet pdf. Equivalent
Type Designator: DAMIA1100N100
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1800 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 1100 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 210 nS
Cossⓘ - Output Capacitance: 0.0078 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0008 Ohm
Package: SOT227
DAMIA1100N100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DAMIA1100N100 Datasheet (PDF)
damia1100n100.pdf
DAMIA1100N100DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETSOT-227HPreliminaryFeaturesSD VDSS = 100V RDS(ON)
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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