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DAMIA1100N100 Specs and Replacement


   Type Designator: DAMIA1100N100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1800 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 210 nS
   Cossⓘ - Output Capacitance: 0.0078 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0008 Ohm
   Package: SOT227
 

 DAMIA1100N100 substitution

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DAMIA1100N100 datasheet

 ..1. Size:360K  dacosemi
 damia1100n100.pdf pdf_icon

DAMIA1100N100

DAMIA1100N100 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET SOT-227H Preliminary Features S D VDSS = 100V RDS(ON) ... See More ⇒

Detailed specifications: DAMI300N150 , DAMI320N100 , DAMI330N60 , DAMI360N150 , DAMI450N100 , DAMI500N60 , DAMI560N100 , DAMI660N60 , IRF9540 , P0165ED , P0165EI , P0260EDA , P0260EIA , P0306BT , P0406AK , P0460EDA , P0470ED .

History: 2SK962-01

Keywords - DAMIA1100N100 MOSFET specs

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