FQP3P50 PDF and Equivalents Search

 

FQP3P50 Specs and Replacement

Type Designator: FQP3P50

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.9 Ohm

Package: TO220

FQP3P50 substitution

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FQP3P50 datasheet

 ..1. Size:640K  fairchild semi
 fqp3p50.pdf pdf_icon

FQP3P50

August 2000 TM QFET QFET QFET QFET FQP3P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.7A, -500V, RDS(on) = 4.9 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18 nC) planar stripe, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technology has bee... See More ⇒

 9.1. Size:549K  fairchild semi
 fqp3p20.pdf pdf_icon

FQP3P50

April 2000 TM QFET QFET QFET QFET FQP3P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.8A, -200V, RDS(on) = 2.7 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has bee... See More ⇒

Detailed specifications: FQP34N20 , FCPF11N60 , FQP3N30 , FQP3N60C , FCP11N60 , FQP3N80C , FQP15P12 , FQP3P20 , IRFZ24N , FQP44N10 , FQB11N40C , FQP45N15V2 , FQP46N15 , FQP47P06 , FQP4N80 , IRFU220B , FQP4N90C .

Keywords - FQP3P50 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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