All MOSFET. FQP3P50 Datasheet

 

FQP3P50 Datasheet and Replacement


   Type Designator: FQP3P50
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.9 Ohm
   Package: TO220
 

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FQP3P50 Datasheet (PDF)

 ..1. Size:640K  fairchild semi
 fqp3p50.pdf pdf_icon

FQP3P50

August 2000TMQFETQFETQFETQFETFQP3P50500V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.7A, -500V, RDS(on) = 4.9 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18 nC)planar stripe, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has bee

 9.1. Size:549K  fairchild semi
 fqp3p20.pdf pdf_icon

FQP3P50

April 2000TMQFETQFETQFETQFETFQP3P20200V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.8A, -200V, RDS(on) = 2.7 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has bee

Datasheet: FQP34N20 , FCPF11N60 , FQP3N30 , FQP3N60C , FCP11N60 , FQP3N80C , FQP15P12 , FQP3P20 , 8N60 , FQP44N10 , FQB11N40C , FQP45N15V2 , FQP46N15 , FQP47P06 , FQP4N80 , IRFU220B , FQP4N90C .

History: ZXMN3B14F | CED08N6A

Keywords - FQP3P50 MOSFET datasheet

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