P0260EIA Datasheet. Specs and Replacement

Type Designator: P0260EIA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 37 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.85 Ohm

Package: TO-251

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P0260EIA datasheet

 ..1. Size:167K  niko-sem
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P0260EIA

N-Channel Enhancement Mode P0260EIA NIKO-SEM TO-251 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G 600V 4.85 2A 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V TC = 25 C... See More ⇒

 7.1. Size:806K  unikc
 p0260ei.pdf pdf_icon

P0260EIA

P0260EI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.4 @VGS = 10V 600V 2A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 2 ID Continuous Drain Current2 TC = 100 C 1.4 A IDM 8 Pulsed Drain Current1... See More ⇒

 7.2. Size:730K  unikc
 p0260eis.pdf pdf_icon

P0260EIA

P0260EIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.4 @VGS = 10V 600V 2A 1.GATE 2.DRAIN 3.SOURCE TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 2 ID Continuous Drain Current2 TC = 100 C 1.4 ... See More ⇒

 8.1. Size:780K  unikc
 p0260etf.pdf pdf_icon

P0260EIA

P0260ETF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.3 @VGS = 10V 600V 2A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 2 ID Continuous Drain Current2 TC = 100 C 1.3 A IDM 8 Pulsed Drain Curre... See More ⇒

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Detailed specifications: DAMI450N100, DAMI500N60, DAMI560N100, DAMI660N60, DAMIA1100N100, P0165ED, P0165EI, P0260EDA, 2N7002, P0306BT, P0406AK, P0460EDA, P0470ED, P0470ETF, P0470JD, P0508AT, P0610BT

Keywords - P0260EIA MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.