All MOSFET. P0260EIA Datasheet

 

P0260EIA Datasheet and Replacement


   Type Designator: P0260EIA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 37 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.85 Ohm
   Package: TO-251
 

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P0260EIA Datasheet (PDF)

 ..1. Size:167K  niko-sem
p0260eia.pdf pdf_icon

P0260EIA

N-Channel Enhancement Mode P0260EIANIKO-SEM TO-251 Field Effect Transistor Halogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G600V 4.85 2A 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 600 VGate-Source Voltage VGS 30 VTC = 25 C

 7.1. Size:806K  unikc
p0260ei.pdf pdf_icon

P0260EIA

P0260EIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID4.4 @VGS = 10V600V 2ATO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C2IDContinuous Drain Current2TC = 100 C1.4AIDM8Pulsed Drain Current1

 7.2. Size:730K  unikc
p0260eis.pdf pdf_icon

P0260EIA

P0260EISN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID4.4 @VGS = 10V600V 2A1.GATE2.DRAIN3.SOURCETO-251(IS)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C2IDContinuous Drain Current2TC = 100 C1.4

 8.1. Size:780K  unikc
p0260etf.pdf pdf_icon

P0260EIA

P0260ETFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID4.3 @VGS = 10V600V 2ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C2IDContinuous Drain Current2TC = 100 C1.3AIDM8Pulsed Drain Curre

Datasheet: DAMI450N100 , DAMI500N60 , DAMI560N100 , DAMI660N60 , DAMIA1100N100 , P0165ED , P0165EI , P0260EDA , K4145 , P0306BT , P0406AK , P0460EDA , P0470ED , P0470ETF , P0470JD , P0508AT , P0610BT .

History: CEB540L | 7N65L-TQ2-T | HCS60R260S | RSF014N03 | OSG65R290AF | PSMN7R5-60YL | IXTK82N25P

Keywords - P0260EIA MOSFET datasheet

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