All MOSFET. P0620ED Datasheet

 

P0620ED Datasheet and Replacement


   Type Designator: P0620ED
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 31 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: TO-252
 

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P0620ED Datasheet (PDF)

 ..1. Size:307K  niko-sem
 p0620ed.pdf pdf_icon

P0620ED

P0620ED N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D200V 580m 6A G1: GATE 2: DRAIN S3: SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS 20 V TC =

 9.1. Size:603K  supertex
 tp0620.pdf pdf_icon

P0620ED

Supertex inc. TP0620P-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Low threshold (-2.4V max.) This low threshold, enhancement-mode (normally-off)transistor utilizes a vertical DMOS structure and Supertexs High input impedancewell-proven, silicon-gate manufacturing process. This Low input capacitance (85pF typical)combination produces a dev

Datasheet: P0306BT , P0406AK , P0460EDA , P0470ED , P0470ETF , P0470JD , P0508AT , P0610BT , IRF9540N , P0660ED , P0660EI , P0706BD , P0706BK , P0706BV , P0765JD , P0770ED , P0770JD .

History: IPB60R099CP | AP9992GP-A-HF | OSG65R360GEF | TPCA8027-H | 2SK1455 | SSF2610E | SVS14N65SD2

Keywords - P0620ED MOSFET datasheet

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