P1010AT Datasheet. Specs and Replacement

Type Designator: P1010AT  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 115 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 69 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 99 nS

Cossⓘ - Output Capacitance: 375 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: TO-220

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P1010AT datasheet

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P1010AT

N-Channel Enhancement Mode P1010AT NIKO-SEM Field Effect Transistor TO-220 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 100V 10.5m 69A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 25 V TC = ... See More ⇒

Detailed specifications: P0706BV, P0765JD, P0770ED, P0770JD, P0770JF, P0865ETF, P0903YK, P0908AK, STP80NF70, P1050ETF, P1060ETFNA, P1065ETF, P1120EF, P1160JD, P1160JF, P1165JD, P1165JFN

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