All MOSFET. P1010AT Datasheet

 

P1010AT MOSFET. Datasheet pdf. Equivalent


   Type Designator: P1010AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 69 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 76 nC
   trⓘ - Rise Time: 99 nS
   Cossⓘ - Output Capacitance: 375 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TO-220

 P1010AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P1010AT Datasheet (PDF)

 ..1. Size:190K  niko-sem
 p1010at.pdf

P1010AT P1010AT

N-Channel Enhancement Mode P1010AT NIKO-SEM Field Effect Transistor TO-220 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G100V 10.5m 69A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 25 V TC =

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