All MOSFET. P1010AT Datasheet

 

P1010AT Datasheet and Replacement


   Type Designator: P1010AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 69 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 99 nS
   Cossⓘ - Output Capacitance: 375 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TO-220
 

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P1010AT Datasheet (PDF)

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P1010AT

N-Channel Enhancement Mode P1010AT NIKO-SEM Field Effect Transistor TO-220 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G100V 10.5m 69A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 25 V TC =

Datasheet: P0706BV , P0765JD , P0770ED , P0770JD , P0770JF , P0865ETF , P0903YK , P0908AK , 20N50 , P1050ETF , P1060ETFNA , P1065ETF , P1120EF , P1160JD , P1160JF , P1165JD , P1165JFN .

History: IRF6216PBF-1 | IRF6641 | SSM5G04TU | QM4014D | ELM13400CA-S | CS12N65A8H | PMZB380XN

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