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FQP45N15V2 Spec and Replacement


   Type Designator: FQP45N15V2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO220
 

 FQP45N15V2 substitution

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FQP45N15V2 Specs

 ..1. Size:954K  fairchild semi
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FQP45N15V2

QFET FQP45N15V2/FQPF45N15V2 150V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 45A, 150V, RDS(on) = 0.04 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 72 nC) planar stripe, DMOS technology. Low Crss ( typical 135 pF) This advanced technology has been especially tailor... See More ⇒

Detailed specifications: FQP3N60C , FCP11N60 , FQP3N80C , FQP15P12 , FQP3P20 , FQP3P50 , FQP44N10 , FQB11N40C , P60NF06 , FQP46N15 , FQP47P06 , FQP4N80 , IRFU220B , FQP4N90C , FQP4P40 , FQP50N06L , FQP55N10 .

Keywords - FQP45N15V2 MOSFET specs

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