FQP45N15V2 Datasheet. Specs and Replacement
Type Designator: FQP45N15V2 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO220
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FQP45N15V2 substitution
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FQP45N15V2 datasheet
fqp45n15v2 fqpf45n15v2.pdf
QFET FQP45N15V2/FQPF45N15V2 150V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 45A, 150V, RDS(on) = 0.04 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 72 nC) planar stripe, DMOS technology. Low Crss ( typical 135 pF) This advanced technology has been especially tailor... See More ⇒
Detailed specifications: FQP3N60C, FCP11N60, FQP3N80C, FQP15P12, FQP3P20, FQP3P50, FQP44N10, FQB11N40C, P60NF06, FQP46N15, FQP47P06, FQP4N80, IRFU220B, FQP4N90C, FQP4P40, FQP50N06L, FQP55N10
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