All MOSFET. P1165JD Datasheet

 

P1165JD Datasheet and Replacement


   Type Designator: P1165JD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 42 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-252
 

 P1165JD substitution

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P1165JD Datasheet (PDF)

 ..1. Size:308K  niko-sem
 p1165jd.pdf pdf_icon

P1165JD

N-Channel Enhancement Mode P1165JD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY DV(BR)DSS RDS(ON) ID 650V 400m 11A 1. GATE 2. DRAIN G 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V TC

 8.1. Size:313K  niko-sem
 p1165jfn.pdf pdf_icon

P1165JD

N-Channel Enhancement Mode P1165JFN NIKO-SEM Field Effect Transistor TO-220FN Halogen-Free & Lead-Free PRODUCT SUMMARY DV(BR)DSS RDS(ON) ID 650V 380m 11A G1. GATE 2. DRAIN 3. SOURCE S 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS

Datasheet: P0908AK , P1010AT , P1050ETF , P1060ETFNA , P1065ETF , P1120EF , P1160JD , P1160JF , IRF1407 , P1165JFN , P1306ED , P1306EK , P1350ETF , P1406BV , P1410BD , P1410BK , P1560JD .

History: BF900 | BLP075N10G-P | BLP023N10-P | BLP065N08GL-Q | BLP10N20J-B | 11NM70G-TF1-T | IRF7807D2

Keywords - P1165JD MOSFET datasheet

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