P1165JFN Datasheet. Specs and Replacement

Type Designator: P1165JFN  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 43 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO-220FN

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P1165JFN datasheet

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P1165JFN

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P1165JFN

N-Channel Enhancement Mode P1165JD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID 650V 400m 11A 1. GATE 2. DRAIN G 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V TC ... See More ⇒

Detailed specifications: P1010AT, P1050ETF, P1060ETFNA, P1065ETF, P1120EF, P1160JD, P1160JF, P1165JD, 2SK3568, P1306ED, P1306EK, P1350ETF, P1406BV, P1410BD, P1410BK, P1560JD, P1560JF

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