All MOSFET. P1625ED Datasheet

 

P1625ED Datasheet and Replacement


   Type Designator: P1625ED
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.265 Ohm
   Package: TO-252
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P1625ED Datasheet (PDF)

 ..1. Size:241K  niko-sem
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P1625ED

N-Channel Logic Level Enhancement P1625ED NIKO-SEM Mode Field Effect Transistor TO-252 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.GATE 265m 250V 16A G 2.DRAIN 3.SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 16 Continuous Dra

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IPB80N06S4L-07 | SUP28N15-52 | AFN4248W | KQB2N60 | DMN2020UFCL | IRLU8743

Keywords - P1625ED MOSFET datasheet

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