FQP47P06 Datasheet. Specs and Replacement
Type Designator: FQP47P06 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 47 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: TO220
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FQP47P06 substitution
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FQP47P06 datasheet
fqp47p06.pdf
May 2001 TM QFET FQP47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -47A, -60V, RDS(on) = 0.026 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 84 nC) planar stripe, DMOS technology. Low Crss ( typical 320 pF) This advanced technology has been especially tailored... See More ⇒
Detailed specifications: FQP3N80C, FQP15P12, FQP3P20, FQP3P50, FQP44N10, FQB11N40C, FQP45N15V2, FQP46N15, AO3400A, FQP4N80, IRFU220B, FQP4N90C, FQP4P40, FQP50N06L, FQP55N10, FQP6N60C, FQP5N60C
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