All MOSFET. FQP47P06 Datasheet

 

FQP47P06 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP47P06

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 160 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 47 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm

Package: TO220

FQP47P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP47P06 Datasheet (PDF)

1.1. fqp47p06.pdf Size:733K _fairchild_semi

FQP47P06
FQP47P06

May 2001 TM QFET FQP47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -47A, -60V, RDS(on) = 0.026? @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 84 nC) planar stripe, DMOS technology. • Low Crss ( typical 320 pF) This advanced technology has been especially tailored to • Fast s

Datasheet: FQP3N80C , FQP15P12 , FQP3P20 , FQP3P50 , FQP44N10 , FQB11N40C , FQP45N15V2 , FQP46N15 , TPC8107 , FQP4N80 , IRFU220B , FQP4N90C , FQP4P40 , FQP50N06L , FQP55N10 , FQP6N60C , FQP5N60C .

 


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