FQP47P06 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQP47P06
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 160 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 47 A
Maximum Junction Temperature (Tj): 175 °C
Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm
Package: TO220
FQP47P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQP47P06 Datasheet (PDF)
1.1. fqp47p06.pdf 
Size:733K _fairchild_semi
May 2001 TM QFET FQP47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -47A, -60V, RDS(on) = 0.026? @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 84 nC) planar stripe, DMOS technology. • Low Crss ( typical 320 pF) This advanced technology has been especially tailored to • Fast s
Datasheet: FQP3N80C , FQP15P12 , FQP3P20 , FQP3P50 , FQP44N10 , FQB11N40C , FQP45N15V2 , FQP46N15 , TPC8107 , FQP4N80 , IRFU220B , FQP4N90C , FQP4P40 , FQP50N06L , FQP55N10 , FQP6N60C , FQP5N60C .
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