FQP47P06 Datasheet and Replacement
Type Designator: FQP47P06
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 47 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: TO220
FQP47P06 substitution
FQP47P06 Datasheet (PDF)
fqp47p06.pdf

May 2001TMQFETFQP47P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -47A, -60V, RDS(on) = 0.026 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC)planar stripe, DMOS technology. Low Crss ( typical 320 pF)This advanced technology has been especially tailored
Datasheet: FQP3N80C , FQP15P12 , FQP3P20 , FQP3P50 , FQP44N10 , FQB11N40C , FQP45N15V2 , FQP46N15 , RU6888R , FQP4N80 , IRFU220B , FQP4N90C , FQP4P40 , FQP50N06L , FQP55N10 , FQP6N60C , FQP5N60C .
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History: FQP8P10 | FDMS7660



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