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FQP47P06 Spec and Replacement


   Type Designator: FQP47P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: TO220
 

 FQP47P06 substitution

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FQP47P06 Specs

 ..1. Size:733K  fairchild semi
 fqp47p06.pdf pdf_icon

FQP47P06

May 2001 TM QFET FQP47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -47A, -60V, RDS(on) = 0.026 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 84 nC) planar stripe, DMOS technology. Low Crss ( typical 320 pF) This advanced technology has been especially tailored... See More ⇒

Detailed specifications: FQP3N80C , FQP15P12 , FQP3P20 , FQP3P50 , FQP44N10 , FQB11N40C , FQP45N15V2 , FQP46N15 , AO3400A , FQP4N80 , IRFU220B , FQP4N90C , FQP4P40 , FQP50N06L , FQP55N10 , FQP6N60C , FQP5N60C .

History: 2N6770JANTX | IRF9358PBF | IPP029N06N | IRF9310PBF

Keywords - FQP47P06 MOSFET specs

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