All MOSFET. P2A06BT Datasheet

 

P2A06BT Datasheet and Replacement


   Type Designator: P2A06BT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 198 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 99 nS
   Cossⓘ - Output Capacitance: 1229 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: TO-220
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P2A06BT Datasheet (PDF)

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P2A06BT

P2A06BT N-Channel Logic Level Enhancement NIKO-SEM TO-220 Mode Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.GATE 2.8m 60V 198A G 2.DRAIN 3.SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 198 Continuous Dr

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History: FQU30N06LTU | HLML6401 | SI3457CDV | STP270N04 | IRF2804PBF | AM1922NE | AP85T03GH-HF

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