P3506ED
MOSFET. Datasheet pdf. Equivalent
Type Designator: P3506ED
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 27
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 29
nC
trⓘ - Rise Time: 67
nS
Cossⓘ -
Output Capacitance: 149
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035
Ohm
Package:
TO-252
P3506ED
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P3506ED
Datasheet (PDF)
..1. Size:290K niko-sem
p3506ed.pdf 
P-Channel Enhancement Mode P3506ED NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -60V 35m -27A G 1. GATE 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 25 V TC = 2
8.1. Size:200K niko-sem
p3506etf.pdf
P-Channel Enhancement Mode P3506ETF NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -60V 35m -20A 1. GATE G2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 25 V TC
8.2. Size:199K niko-sem
p3506et.pdf
P-Channel Enhancement Mode P3506ET NIKO-SEM TO-220 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -60V 35m -36A 1. GATE G 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 25 V TC =
8.3. Size:385K niko-sem
p3506ek.pdf
P-Channel Logic Level Enhancement Mode P3506EK NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D-60V 35m -27A GFeatures Pb-Free, Halogen Free and RoHS compliant. S Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. D D D D Optimized Gate Charge to Minimize Switching
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