P9515BD Specs and Replacement
Type Designator: P9515BD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 106 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: TO-252
P9515BD substitution
P9515BD datasheet
p9515bd.pdf
N-Channel Enhancement Mode P9515BD NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150V 90m 18A 1. GATE G 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 20 V TC = 2... See More ⇒
Detailed specifications: P5515BV , P7510ED , P7510EEU , P7510EK , P8010HK , P8806BM , P9006EDA , P9006EVA , IRFB4227 , PA010BV , PA110BEA , PA110ED , PA110HEA , PA110NK , PA110NV , PA410BTF , PA515BD .
Keywords - P9515BD MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
