All MOSFET. P9515BD Datasheet

 

P9515BD Datasheet and Replacement


   Type Designator: P9515BD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 106 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO-252
 

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P9515BD Datasheet (PDF)

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P9515BD

N-Channel Enhancement Mode P9515BD NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150V 90m 18A 1. GATE G2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 20 V TC = 2

Datasheet: P5515BV , P7510ED , P7510EEU , P7510EK , P8010HK , P8806BM , P9006EDA , P9006EVA , AON6414A , PA010BV , PA110BEA , PA110ED , PA110HEA , PA110NK , PA110NV , PA410BTF , PA515BD .

History: 2N80G-TF3-T | 2SK2147-01

Keywords - P9515BD MOSFET datasheet

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