PA110HEA Datasheet. Specs and Replacement
Type Designator: PA110HEA 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 18 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 54 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: PDFN3X3P
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PA110HEA substitution
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PA110HEA datasheet
pa110hea.pdf
Dual N-Channel Enhancement Mode PA110HEA NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free D1 D1 D2 D2 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 110m 8.4A #1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC = 25... See More ⇒
pa110bc.pdf
PA110BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 110m @VGS = 10V 100V 4A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 4 ID Continuous Drain Current TA = 100 C 3.5 A IDM 15 Pulsed Drain Current1 IAS Avalanche Current 4.8 E... See More ⇒
pa110bv.pdf
PA110BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 110m @VGS = 10V 100V 3.2A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 V TA = 25 C 3.2 ID Continuous Drain Current TA = 70 C 2.5 A IDM 10 Pulsed Drain Curr... See More ⇒
pa110bd.pdf
PA110BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 110m @VGS = 10V 100V 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TC = 25 C 15 ID Continuous Drain Current TC = 100 C 10 A IDM 60 Pulsed Drain Curren... See More ⇒
Detailed specifications: P8010HK, P8806BM, P9006EDA, P9006EVA, P9515BD, PA010BV, PA110BEA, PA110ED, IRFB4115, PA110NK, PA110NV, PA410BTF, PA515BD, PA520BA, PA567EA, PA567JA, PA597BA
Keywords - PA110HEA MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
MOSFET Parameters. How They Affect Each Other
History: IPB032N10N5
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