PA110HEA PDF and Equivalents Search

 

PA110HEA Specs and Replacement


   Type Designator: PA110HEA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 18 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: PDFN3X3P
 

 PA110HEA substitution

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PA110HEA datasheet

 ..1. Size:308K  niko-sem
pa110hea.pdf pdf_icon

PA110HEA

Dual N-Channel Enhancement Mode PA110HEA NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free D1 D1 D2 D2 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 110m 8.4A #1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC = 25... See More ⇒

 9.1. Size:771K  unikc
pa110bc.pdf pdf_icon

PA110HEA

PA110BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 110m @VGS = 10V 100V 4A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 4 ID Continuous Drain Current TA = 100 C 3.5 A IDM 15 Pulsed Drain Current1 IAS Avalanche Current 4.8 E... See More ⇒

 9.2. Size:465K  unikc
pa110bv.pdf pdf_icon

PA110HEA

PA110BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 110m @VGS = 10V 100V 3.2A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 V TA = 25 C 3.2 ID Continuous Drain Current TA = 70 C 2.5 A IDM 10 Pulsed Drain Curr... See More ⇒

 9.3. Size:411K  unikc
pa110bd.pdf pdf_icon

PA110HEA

PA110BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 110m @VGS = 10V 100V 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TC = 25 C 15 ID Continuous Drain Current TC = 100 C 10 A IDM 60 Pulsed Drain Curren... See More ⇒

Detailed specifications: P8010HK , P8806BM , P9006EDA , P9006EVA , P9515BD , PA010BV , PA110BEA , PA110ED , IRFB4115 , PA110NK , PA110NV , PA410BTF , PA515BD , PA520BA , PA567EA , PA567JA , PA597BA .

History: JMSH0401PGQ

Keywords - PA110HEA MOSFET specs

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