PA410BTF Datasheet. Specs and Replacement

Type Designator: PA410BTF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 29 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 59 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO-220F

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PA410BTF datasheet

 ..1. Size:203K  niko-sem
 pa410btf.pdf pdf_icon

PA410BTF

N-Channel Enhancement Mode PA410BTF NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G 100V 140m 10A 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC ... See More ⇒

 8.1. Size:737K  unikc
 pa410bd.pdf pdf_icon

PA410BTF

PA410BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 140m @VGS = 10V 100V 10A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 V TC = 25 C 10 ID Continuous Drain Current TC = 100 C 7 A IDM 30 Pulsed Drain Curren... See More ⇒

 8.2. Size:302K  niko-sem
 pa410bd.pdf pdf_icon

PA410BTF

N-Channel Enhancement Mode PA410BD NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 2. DRAIN 100V 140m 10A 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC = ... See More ⇒

Detailed specifications: P9006EVA, P9515BD, PA010BV, PA110BEA, PA110ED, PA110HEA, PA110NK, PA110NV, IRF9540, PA515BD, PA520BA, PA567EA, PA567JA, PA597BA, PA5D8EA, PA5D8JA, PA5S6EA

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