PA567JA Datasheet. Specs and Replacement
Type Designator: PA567JA 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.68 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 18 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: SOT-23-6
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PA567JA datasheet
pa567ja.pdf
Dual P-Channel Logic Level PA567JA NIKO-SEM Enhancement Mode Field Effect SOT-23-6 Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 520m -0.68A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ... See More ⇒
pa567ea.pdf
P-Channel Enhancement Mode PA567EA NIKO-SEM SOT-23-6 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 520m -0.68A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ESD Protecti... See More ⇒
Detailed specifications: PA110ED, PA110HEA, PA110NK, PA110NV, PA410BTF, PA515BD, PA520BA, PA567EA, IRF4905, PA597BA, PA5D8EA, PA5D8JA, PA5S6EA, PA5S6JA, PA607UA, PA710ED, PA910BC
Keywords - PA567JA MOSFET specs
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