All MOSFET. PA5D8EA Datasheet

 

PA5D8EA Datasheet and Replacement


   Type Designator: PA5D8EA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.49 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 0.96 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 24 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SOT-23-6
 

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PA5D8EA Datasheet (PDF)

 ..1. Size:261K  niko-sem
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PA5D8EA

N-Channel Enhancement Mode PA5D8EA NIKO-SEM Field Effect Transistor SOT-23-6 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 300m 0.96A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ESD Protectio

 9.1. Size:272K  niko-sem
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PA5D8EA

Dual N-Channel Logic Level PA5D8JA NIKO-SEM Enhancement Mode Field Effect Transistor SOT-23-6 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 300m 0.96A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses.

Datasheet: PA110NK , PA110NV , PA410BTF , PA515BD , PA520BA , PA567EA , PA567JA , PA597BA , IRFP260 , PA5D8JA , PA5S6EA , PA5S6JA , PA607UA , PA710ED , PA910BC , PA910BM , PB502CW .

History: NVMTS0D6N04C

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