PA5D8EA Specs and Replacement
Type Designator: PA5D8EA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.49 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.96 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 24 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: SOT-23-6
PA5D8EA substitution
PA5D8EA datasheet
pa5d8ea.pdf
N-Channel Enhancement Mode PA5D8EA NIKO-SEM Field Effect Transistor SOT-23-6 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 300m 0.96A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ESD Protectio... See More ⇒
pa5d8ja.pdf
Dual N-Channel Logic Level PA5D8JA NIKO-SEM Enhancement Mode Field Effect Transistor SOT-23-6 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 300m 0.96A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ... See More ⇒
Detailed specifications: PA110NK , PA110NV , PA410BTF , PA515BD , PA520BA , PA567EA , PA567JA , PA597BA , 2SK3878 , PA5D8JA , PA5S6EA , PA5S6JA , PA607UA , PA710ED , PA910BC , PA910BM , PB502CW .
Keywords - PA5D8EA MOSFET specs
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