All MOSFET. PA5S6JA Datasheet

 

PA5S6JA Datasheet and Replacement


   Type Designator: PA5S6JA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: SOT-23-6
 

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PA5S6JA Datasheet (PDF)

 ..1. Size:353K  niko-sem
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PA5S6JA

PA5S6JA NIKO-SEM Dual N-Channel Logic Level MOSFET SOT-23-6 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 450m 0.75A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products Integrated ESD diode wit

 9.1. Size:342K  niko-sem
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PA5S6JA

PA5S6EA NIKO-SEM N-Channel Logic Level MOSFET SOT-23-6 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 450m 0.75A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products Integrated ESD diode with ESD

Datasheet: PA515BD , PA520BA , PA567EA , PA567JA , PA597BA , PA5D8EA , PA5D8JA , PA5S6EA , IRF1010E , PA607UA , PA710ED , PA910BC , PA910BM , PB502CW , PB5A2BX , PB5A3JW , PB5B5BX .

History: PHD82NQ03LT | 2SK1446 | SVF2N60CNF | BSC084P03NS3G | BUK9624-55A

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