All MOSFET. PA5S6JA Datasheet

 

PA5S6JA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PA5S6JA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 0.75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1 nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: SOT-23-6

 PA5S6JA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PA5S6JA Datasheet (PDF)

 ..1. Size:353K  niko-sem
 pa5s6ja.pdf

PA5S6JA PA5S6JA

PA5S6JA NIKO-SEM Dual N-Channel Logic Level MOSFET SOT-23-6 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 450m 0.75A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products Integrated ESD diode wit

 9.1. Size:342K  niko-sem
 pa5s6ea.pdf

PA5S6JA PA5S6JA

PA5S6EA NIKO-SEM N-Channel Logic Level MOSFET SOT-23-6 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 450m 0.75A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products Integrated ESD diode with ESD

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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