All MOSFET. PA710ED Datasheet

 

PA710ED Datasheet and Replacement


   Type Designator: PA710ED
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 59 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO-252
 

 PA710ED substitution

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PA710ED Datasheet (PDF)

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PA710ED

P-Channel Logic Level Enhancement Mode PA710ED NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY DV(BR)DSS RDS(ON) ID -100V 170m -12A G 1. GATE 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS

Datasheet: PA567EA , PA567JA , PA597BA , PA5D8EA , PA5D8JA , PA5S6EA , PA5S6JA , PA607UA , 5N60 , PA910BC , PA910BM , PB502CW , PB5A2BX , PB5A3JW , PB5B5BX , PB5C5JW , PB5G8JW .

History: FQB19N10TM | SPP15N60C3 | RJK03C5DPA | VBE1410 | AP6680AGM-HF | IXTV230N085TS | F12W50VX2

Keywords - PA710ED MOSFET datasheet

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