All MOSFET. PA910BM Datasheet

 

PA910BM MOSFET. Datasheet pdf. Equivalent


   Type Designator: PA910BM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 1.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.1 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: SOT-23

 PA910BM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PA910BM Datasheet (PDF)

 ..1. Size:212K  niko-sem
 pa910bm.pdf

PA910BM PA910BM

N-Channel Enhancement Mode PA910BMNIKO-SEM SOT-23Field Effect Transistor Halogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G: GATE G100V 190m 1.6A D: DRAIN S: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSGate-Source Voltage VGS 20 VTA = 25 C 1.6 Continuous Drain Current ID

 8.1. Size:187K  niko-sem
 pa910bd.pdf

PA910BM PA910BM

N-Channel Enhancement Mode PA910BD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 190m 8.1A 1. GATE 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 8.1 Continuous Drain Cu

 8.2. Size:209K  niko-sem
 pa910bc.pdf

PA910BM PA910BM

N-Channel Enhancement Mode PA910BCNIKO-SEM SOT-89Field Effect Transistor Halogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G1 2 3100V 190m 2.9A 1: GATE 2: DRAIN 3: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSGate-Source Voltage VGS 20 VTA = 25 C 2.9 Continuous Drain Cur

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