PB5A2BX MOSFET PDF: N-Ch, 20V, 11A. Datasheet. Full specification with pinout and replacement list

PB5A2BX Specs and Replacement

   Type Designator: PB5A2BX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 227 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: PDFN2X2S

PB5A2BX substitution

- MOSFET ⓘ Cross-Reference Search

PB5A2BX datasheet

..1. Size:306K niko-sem
pb5a2bx.pdf pdf_icon

PB5A2BX N-Channel Enhancement Mode NIKO-SEM PDFN 2x2S Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 9m 11A D G Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. S Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Application... See More ⇒

8.1. Size:807K unikc
pb5a2ba.pdf pdf_icon

PB5A2BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 4.5V 20V 11A 100% RG Test PDFN 2X2S 100% UIL Test ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage 8 V TA = 25 C 11 ID Continuous Drain Current TA= 70 C 9 A IDM ... See More ⇒

Detailed specifications: PA5D8JA , PA5S6EA , PA5S6JA , PA607UA , PA710ED , PA910BC , PA910BM , PB502CW , 4435 , PB5A3JW , PB5B5BX , PB5C5JW , PB5G8JW , PB600BX , PB606BX , PB6C4JU , PB6D2BX .