FQP55N10 Datasheet. Specs and Replacement
Type Designator: FQP55N10 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 155 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: TO220
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FQP55N10 substitution
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FQP55N10 datasheet
fqp55n10.pdf
August 2000 TM QFET QFET QFET QFET FQP55N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 55A, 100V, RDS(on) = 0.026 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 75 nC) planar stripe, DMOS technology. Low Crss ( typical 130 pF) This advanced technology has been... See More ⇒
fqp55n06.pdf
May 2001 TM QFET FQP55N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 55A, 60V, RDS(on) = 0.020 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been especially tailored to ... See More ⇒
Detailed specifications: FQP45N15V2, FQP46N15, FQP47P06, FQP4N80, IRFU220B, FQP4N90C, FQP4P40, FQP50N06L, IRFZ46N, FQP6N60C, FQP5N60C, FQPF5N50C, FQP65N06, FQP6N40C, FQU2N90, FQP6N40CF, FQU2N50B
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