FQP55N10 Spec and Replacement
Type Designator: FQP55N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 155 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: TO220
FQP55N10 substitution
FQP55N10 Specs
fqp55n10.pdf
August 2000 TM QFET QFET QFET QFET FQP55N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 55A, 100V, RDS(on) = 0.026 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 75 nC) planar stripe, DMOS technology. Low Crss ( typical 130 pF) This advanced technology has been... See More ⇒
fqp55n06.pdf
May 2001 TM QFET FQP55N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 55A, 60V, RDS(on) = 0.020 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been especially tailored to ... See More ⇒
Detailed specifications: FQP45N15V2 , FQP46N15 , FQP47P06 , FQP4N80 , IRFU220B , FQP4N90C , FQP4P40 , FQP50N06L , IRFZ46N , FQP6N60C , FQP5N60C , FQPF5N50C , FQP65N06 , FQP6N40C , FQU2N90 , FQP6N40CF , FQU2N50B .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
