All MOSFET. PB5A3JW Datasheet

 

PB5A3JW Datasheet and Replacement


   Type Designator: PB5A3JW
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: PDFN2X2S
 

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PB5A3JW Datasheet (PDF)

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PB5A3JW

Dual P-Channel Enhancement PB5A3JW NIKO-SEM PDFN 2x2S Mode Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 65m -3.6A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products

Datasheet: PA5S6EA , PA5S6JA , PA607UA , PA710ED , PA910BC , PA910BM , PB502CW , PB5A2BX , AON7410 , PB5B5BX , PB5C5JW , PB5G8JW , PB600BX , PB606BX , PB6C4JU , PB6D2BX , PB6W8BX .

History: SVG076R5NDTR | BUK964R2-60E | PB5C5JW | VSO011N06MS | IXTA130N10T7 | DMN6040SFDE | HMS80N06D

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