All MOSFET. PB5C5JW Datasheet

 

PB5C5JW Datasheet and Replacement


   Type Designator: PB5C5JW
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 77 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: PDFN2X2S
 

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PB5C5JW Datasheet (PDF)

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PB5C5JW

Dual P-Channel Enhancement PB5C5JW NIKO-SEM PDFN 2x2S Mode Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 85m -3.1A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products

Datasheet: PA607UA , PA710ED , PA910BC , PA910BM , PB502CW , PB5A2BX , PB5A3JW , PB5B5BX , IRFB3607 , PB5G8JW , PB600BX , PB606BX , PB6C4JU , PB6D2BX , PB6W8BX , PC015BDA , PC015HVA .

History: AP6679GR | LSB55R066GT | IRFP440R | CS12N65FA9R | QS8M51 | MME70R380PRH | 25N10L-TF3-T

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