PB5C5JW Specs and Replacement
Type Designator: PB5C5JW
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 77 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: PDFN2X2S
PB5C5JW substitution
PB5C5JW datasheet
pb5c5jw.pdf
Dual P-Channel Enhancement PB5C5JW NIKO-SEM PDFN 2x2S Mode Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 85m -3.1A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products... See More ⇒
Detailed specifications: PA607UA , PA710ED , PA910BC , PA910BM , PB502CW , PB5A2BX , PB5A3JW , PB5B5BX , K4145 , PB5G8JW , PB600BX , PB606BX , PB6C4JU , PB6D2BX , PB6W8BX , PC015BDA , PC015HVA .
Keywords - PB5C5JW MOSFET specs
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