PB606BX Datasheet. Specs and Replacement

Type Designator: PB606BX  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: PDFN2X2S

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PB606BX datasheet

 ..1. Size:238K  niko-sem
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PB606BX

PB606BX N-Channel Enhancement Mode NIKO-SEM PDFN 2x2S Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 18m 7.3A G G GATE D DRAIN S SOURCE S 100% RG Test , 100% UIL Test ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Sourc... See More ⇒

 8.1. Size:443K  unikc
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PB606BX

PB606BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 16m @VGS = 10V 30V 7.8A 100%RG TEST PDFN 2X2S 100%UIL TEST ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V TA = 25 C 7.8 ID Continuous Drain Current TA= 70 C 6.2 A ... See More ⇒

Detailed specifications: PA910BM, PB502CW, PB5A2BX, PB5A3JW, PB5B5BX, PB5C5JW, PB5G8JW, PB600BX, 5N65, PB6C4JU, PB6D2BX, PB6W8BX, PC015BDA, PC015HVA, PC561BA, PD515BA, PD551BA

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