PB6W8BX Specs and Replacement
Type Designator: PB6W8BX
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 97 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: PDFN2X2S
PB6W8BX substitution
PB6W8BX datasheet
pb6w8bx.pdf
N-Channel Enhancement Mode PB6W8BX NIKO-SEM Field Effect Transistor PDFN 2x2S Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D 40V 18m 8A G Features S Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. G. GATE D.... See More ⇒
Detailed specifications: PB5A3JW , PB5B5BX , PB5C5JW , PB5G8JW , PB600BX , PB606BX , PB6C4JU , PB6D2BX , IRFB3607 , PC015BDA , PC015HVA , PC561BA , PD515BA , PD551BA , PD5B3BA , PD5B9BA , PD5C1BA .
Keywords - PB6W8BX MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
