All MOSFET. PB6W8BX Datasheet

 

PB6W8BX Datasheet and Replacement


   Type Designator: PB6W8BX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 97 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: PDFN2X2S
 

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PB6W8BX Datasheet (PDF)

 ..1. Size:371K  niko-sem
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PB6W8BX

N-Channel Enhancement Mode PB6W8BX NIKO-SEM Field Effect Transistor PDFN 2x2S Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D40V 18m 8A GFeatures S Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. G. GATE D.

Datasheet: PB5A3JW , PB5B5BX , PB5C5JW , PB5G8JW , PB600BX , PB606BX , PB6C4JU , PB6D2BX , IRF1407 , PC015BDA , PC015HVA , PC561BA , PD515BA , PD551BA , PD5B3BA , PD5B9BA , PD5C1BA .

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