PB6W8BX Datasheet. Specs and Replacement

Type Designator: PB6W8BX  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 97 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: PDFN2X2S

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PB6W8BX datasheet

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PB6W8BX

N-Channel Enhancement Mode PB6W8BX NIKO-SEM Field Effect Transistor PDFN 2x2S Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D 40V 18m 8A G Features S Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. G. GATE D.... See More ⇒

Detailed specifications: PB5A3JW, PB5B5BX, PB5C5JW, PB5G8JW, PB600BX, PB606BX, PB6C4JU, PB6D2BX, AON7506, PC015BDA, PC015HVA, PC561BA, PD515BA, PD551BA, PD5B3BA, PD5B9BA, PD5C1BA

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.