PD5C9BA Datasheet and Replacement
Type Designator: PD5C9BA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 103 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
Package: TO-252
PD5C9BA substitution
PD5C9BA Datasheet (PDF)
pd5c9ba.pdf

P-Channel Enhancement Mode PD5C9BA NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -40V 44m -19A DGFeatures Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. S Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Applications
Datasheet: PC015BDA , PC015HVA , PC561BA , PD515BA , PD551BA , PD5B3BA , PD5B9BA , PD5C1BA , P60NF06 , PD5E8BA , PD5G3EA , PD5P8BA , PD600BA , PD601CX , PD606BA , PD608BA , PD609CX .
History: AOE6932 | AP4543GEH-HF | TSM75N75CZ | NCE60N1K0I | PDN2309S
Keywords - PD5C9BA MOSFET datasheet
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History: AOE6932 | AP4543GEH-HF | TSM75N75CZ | NCE60N1K0I | PDN2309S



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