PD606BA Datasheet and Replacement
Type Designator: PD606BA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 19.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 64 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO-252
PD606BA substitution
PD606BA Datasheet (PDF)
pd606ba.pdf

PD606BA N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G30V 18m 24A 2. DRAIN 3. SOURCE S100% RG Test , 100% UIL Test ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Sourc
Datasheet: PD5B9BA , PD5C1BA , PD5C9BA , PD5E8BA , PD5G3EA , PD5P8BA , PD600BA , PD601CX , STP80NF70 , PD608BA , PD609CX , PD616BA , PD618BA , PD676BA , PD6A4BA , PD6A6BA , PD6B2BA .
History: 2SK2197 | LSB80R350GT | HGI120N06SL | MTN2510H8 | RTR025N03FRA | SFF250 | ELM53406CA
Keywords - PD606BA MOSFET datasheet
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History: 2SK2197 | LSB80R350GT | HGI120N06SL | MTN2510H8 | RTR025N03FRA | SFF250 | ELM53406CA



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