All MOSFET. PD606BA Datasheet

 

PD606BA Datasheet and Replacement


   Type Designator: PD606BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 19.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 64 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO-252
 

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PD606BA Datasheet (PDF)

 ..1. Size:281K  niko-sem
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PD606BA

PD606BA N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G30V 18m 24A 2. DRAIN 3. SOURCE S100% RG Test , 100% UIL Test ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Sourc

Datasheet: PD5B9BA , PD5C1BA , PD5C9BA , PD5E8BA , PD5G3EA , PD5P8BA , PD600BA , PD601CX , 75N75 , PD608BA , PD609CX , PD616BA , PD618BA , PD676BA , PD6A4BA , PD6A6BA , PD6B2BA .

History: AP9979GJ | IPP65R280C6

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