All MOSFET. PD609CX Datasheet

 

PD609CX Datasheet and Replacement


   Type Designator: PD609CX
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 26.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 22.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO-252-5
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PD609CX Datasheet (PDF)

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PD609CX

N- & P-Channel Enhancement Mode Field PD609CX NIKO-SEM Effect Transistor TO-252-5 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 -40V 60m -17A Q1 40V 25m 22.5A D1D2G1 G2S1 S2Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to

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History: FTK3139K | KF50N06P | HMS110N15 | NCEA60ND08S | 2N80L-TF1-T | BRF5N60 | P1260AT

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