PD609CX Specs and Replacement
Type Designator: PD609CX
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 26.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 66 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO-252-5
PD609CX substitution
PD609CX datasheet
pd609cx.pdf
N- & P-Channel Enhancement Mode Field PD609CX NIKO-SEM Effect Transistor TO-252-5 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 -40V 60m -17A Q1 40V 25m 22.5A D1 D2 G1 G2 S1 S2 Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to ... See More ⇒
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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