All MOSFET. PD616BA Datasheet

 

PD616BA Datasheet and Replacement


   Type Designator: PD616BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 159 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO-252
 

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PD616BA Datasheet (PDF)

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PD616BA

PD616BA N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G30V 7m 55A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V TC = 25

Datasheet: PD5E8BA , PD5G3EA , PD5P8BA , PD600BA , PD601CX , PD606BA , PD608BA , PD609CX , IRFZ46N , PD618BA , PD676BA , PD6A4BA , PD6A6BA , PD6B2BA , PD6D2BA , PE527BA , PE532DX .

History: TTP115N08A | LNG04R050 | TSM2314CX | BR10N60 | PD609CX | GT45N06 | SSF1007

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