All MOSFET. PD6A4BA Datasheet

 

PD6A4BA Datasheet and Replacement


   Type Designator: PD6A4BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 106 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO-252
 

 PD6A4BA substitution

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PD6A4BA Datasheet (PDF)

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PD6A4BA

N-Channel Enhancement Mode PD6A4BANIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G40V 12m 35A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 40 VGate-Source Voltage VGS 20 VTC = 25 C 35

Datasheet: PD600BA , PD601CX , PD606BA , PD608BA , PD609CX , PD616BA , PD618BA , PD676BA , 2N60 , PD6A6BA , PD6B2BA , PD6D2BA , PE527BA , PE532DX , PE533BA , PE551BA , PE561BA .

History: AP6679GH | OSG65R290KF | IRFP440R | CS12N65FA9R | QS8M51 | MME70R380PRH | 25N10L-TF3-T

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