All MOSFET. PD6A6BA Datasheet

 

PD6A6BA Datasheet and Replacement


   Type Designator: PD6A6BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11.5 nS
   Cossⓘ - Output Capacitance: 216 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-252
 

 PD6A6BA substitution

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PD6A6BA Datasheet (PDF)

 ..1. Size:171K  niko-sem
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PD6A6BA

N-Channel Enhancement Mode PD6A6BANIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G40V 8m 60A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 40 VGate-Source Voltage VGS 20 VTC = 25 C 60

Datasheet: PD601CX , PD606BA , PD608BA , PD609CX , PD616BA , PD618BA , PD676BA , PD6A4BA , CS150N03A8 , PD6B2BA , PD6D2BA , PE527BA , PE532DX , PE533BA , PE551BA , PE561BA , PE597BA .

History: PDN2309S | AP4543GEH-HF | TSM75N75CZ | NCE60N1K0I

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