All MOSFET. PD6B2BA Datasheet

 

PD6B2BA Datasheet and Replacement


   Type Designator: PD6B2BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 63 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 189 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: TO-252
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PD6B2BA Datasheet (PDF)

 ..1. Size:218K  niko-sem
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PD6B2BA

N-Channel Enhancement Mode PD6B2BANIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-FreePRODUCT SUMMARY DV(BR)DSS RDS(ON) ID 30V 6.2m 63A GSFeatures Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. 1. GATE Optimized Gate Charge to Minimize Switching Losses. 2. DRA

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: PV628DA | PV537BA | AP3P7R0EMT | 12N80L-TF3-T | GSM3452 | IXTX120P20T | 2SK1496-Z

Keywords - PD6B2BA MOSFET datasheet

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