All MOSFET. PD6B2BA Datasheet

 

PD6B2BA Datasheet and Replacement


   Type Designator: PD6B2BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 63 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 189 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: TO-252
 

 PD6B2BA substitution

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PD6B2BA Datasheet (PDF)

 ..1. Size:218K  niko-sem
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PD6B2BA

N-Channel Enhancement Mode PD6B2BANIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-FreePRODUCT SUMMARY DV(BR)DSS RDS(ON) ID 30V 6.2m 63A GSFeatures Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. 1. GATE Optimized Gate Charge to Minimize Switching Losses. 2. DRA

Datasheet: PD606BA , PD608BA , PD609CX , PD616BA , PD618BA , PD676BA , PD6A4BA , PD6A6BA , IRFB31N20D , PD6D2BA , PE527BA , PE532DX , PE533BA , PE551BA , PE561BA , PE597BA , PE5B1DZ .

History: 2SK1971 | AOU3N50 | 2N65G-TF2-T | 6N60KG-TA3-T | RFP12N18 | IXTX120P20T | UPA1764G

Keywords - PD6B2BA MOSFET datasheet

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