All MOSFET. PD6B2BA Datasheet

 

PD6B2BA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PD6B2BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 63 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 189 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: TO-252

 PD6B2BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PD6B2BA Datasheet (PDF)

 ..1. Size:218K  niko-sem
 pd6b2ba.pdf

PD6B2BA PD6B2BA

N-Channel Enhancement Mode PD6B2BANIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-FreePRODUCT SUMMARY DV(BR)DSS RDS(ON) ID 30V 6.2m 63A GSFeatures Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. 1. GATE Optimized Gate Charge to Minimize Switching Losses. 2. DRA

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 1N65L-AA3-R

 

 
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