All MOSFET. PE551BA Datasheet

 

PE551BA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PE551BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 154 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: PDFN3X3P

 PE551BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PE551BA Datasheet (PDF)

 ..1. Size:806K  niko-sem
 pe551ba.pdf

PE551BA PE551BA

P-Channel Logic Level Enhancement Mode PE551BA NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-free & Lead-Free DPRODUCT SUMMARY D D D DV(BR)DSS RDS(ON) ID 20m -22A -30V GG : GATE D : DRAIN S : SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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