All MOSFET. FQP65N06 Datasheet

 

FQP65N06 Datasheet and Replacement


   Type Designator: FQP65N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 65 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO220
      - MOSFET Cross-Reference Search

 

FQP65N06 Datasheet (PDF)

 ..1. Size:661K  fairchild semi
 fqp65n06.pdf pdf_icon

FQP65N06

May 2001TMQFETFQP65N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 65A, 60V, RDS(on) = 0.016 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially tailored to

 ..2. Size:801K  onsemi
 fqp65n06.pdf pdf_icon

FQP65N06

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: IRFU220B , FQP4N90C , FQP4P40 , FQP50N06L , FQP55N10 , FQP6N60C , FQP5N60C , FQPF5N50C , HY1906P , FQP6N40C , FQU2N90 , FQP6N40CF , FQU2N50B , FQP6N80C , FQD4P25TMWS , FQP6N90C , FQP70N10 .

History: FTK4N60F | HM7000 | FDME410NZT | WSD3042DN56 | IXTB30N100L | SVF2N70D | TPB65R135MFD

Keywords - FQP65N06 MOSFET datasheet

 FQP65N06 cross reference
 FQP65N06 equivalent finder
 FQP65N06 lookup
 FQP65N06 substitution
 FQP65N06 replacement

 

 
Back to Top

 


 
.