All MOSFET. FQP65N06 Datasheet

 

FQP65N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP65N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 65 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.016 Ohm

Package: TO220

FQP65N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP65N06 Datasheet (PDF)

1.1. fqp65n06.pdf Size:661K _fairchild_semi

FQP65N06
FQP65N06

May 2001 TM QFET FQP65N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 65A, 60V, RDS(on) = 0.016? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 48 nC) planar stripe, DMOS technology. • Low Crss ( typical 100 pF) This advanced technology has been especially tailored to • Fast swit

Datasheet: IRFU220B , FQP4N90C , FQP4P40 , FQP50N06L , FQP55N10 , FQP6N60C , FQP5N60C , FQPF5N50C , 2SK3878 , FQP6N40C , FQU2N90 , FQP6N40CF , FQU2N50B , FQP6N80C , FQD4P25TM_WS , FQP6N90C , FQP70N10 .

 


FQP65N06
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