FQP65N06 Datasheet. Specs and Replacement

Type Designator: FQP65N06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO220

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FQP65N06 datasheet

 ..1. Size:661K  fairchild semi
 fqp65n06.pdf pdf_icon

FQP65N06

May 2001 TM QFET FQP65N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 65A, 60V, RDS(on) = 0.016 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced technology has been especially tailored to... See More ⇒

 ..2. Size:801K  onsemi
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FQP65N06

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: IRFU220B, FQP4N90C, FQP4P40, FQP50N06L, FQP55N10, FQP6N60C, FQP5N60C, FQPF5N50C, 8N65, FQP6N40C, FQU2N90, FQP6N40CF, FQU2N50B, FQP6N80C, FQD4P25TMWS, FQP6N90C, FQP70N10

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.