PE5C6JZ Specs and Replacement

Type Designator: PE5C6JZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 54 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 327 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: PDFN3X3S

PE5C6JZ substitution

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PE5C6JZ datasheet

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PE5C6JZ

Dual N-Channel Enhancement Mode PE5C6JZ NIKO-SEM PDFN 3x3S Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 24V 5.5m 54A Features Patent Pending. Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Loss... See More ⇒

Detailed specifications: PE532DX, PE533BA, PE551BA, PE561BA, PE597BA, PE5B1DZ, PE5B5DX, PE5B7BA, 7N60, PE5E6BA, PE5F7EA, PE5G5EA, PE5M6EA, PE5Q8JZ, PE5V6BA, PE609CA, PE674DT

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