All MOSFET. PE5C6JZ Datasheet

 

PE5C6JZ Datasheet and Replacement


   Type Designator: PE5C6JZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 54 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 327 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: PDFN3X3S
 

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PE5C6JZ Datasheet (PDF)

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PE5C6JZ

Dual N-Channel Enhancement Mode PE5C6JZNIKO-SEM PDFN 3x3S Field Effect Transistor Halogen-Free & Lead-FreePRODUCT SUMMARY V(BR)DSS RDS(ON) ID 24V 5.5m 54A Features Patent Pending. Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Loss

Datasheet: PE532DX , PE533BA , PE551BA , PE561BA , PE597BA , PE5B1DZ , PE5B5DX , PE5B7BA , MMIS60R580P , PE5E6BA , PE5F7EA , PE5G5EA , PE5M6EA , PE5Q8JZ , PE5V6BA , PE609CA , PE674DT .

History: IXTH22N50P | SGSP461 | TK31V60W5 | IXTM4N95 | APT7575BN | IRF7854PBF | BSP321P

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