All MOSFET. PE5C6JZ Datasheet

 

PE5C6JZ Datasheet and Replacement


   Type Designator: PE5C6JZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 54 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 327 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: PDFN3X3S
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PE5C6JZ Datasheet (PDF)

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PE5C6JZ

Dual N-Channel Enhancement Mode PE5C6JZNIKO-SEM PDFN 3x3S Field Effect Transistor Halogen-Free & Lead-FreePRODUCT SUMMARY V(BR)DSS RDS(ON) ID 24V 5.5m 54A Features Patent Pending. Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Loss

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SQ9407EY-T1 | CHM85A3PAGP | TK7P65W | ALD1103DB | SFFX054Z

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