PE5F7EA Datasheet and Replacement
Type Designator: PE5F7EA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 73 nS
Cossⓘ - Output Capacitance: 310 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: PDFN3X3P
PE5F7EA substitution
PE5F7EA Datasheet (PDF)
pe5f7ea.pdf

P-Channel Logic Level Enhancement Mode PE5F7EA NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 13.5m -35A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. G.
Datasheet: PE551BA , PE561BA , PE597BA , PE5B1DZ , PE5B5DX , PE5B7BA , PE5C6JZ , PE5E6BA , RU7088R , PE5G5EA , PE5M6EA , PE5Q8JZ , PE5V6BA , PE609CA , PE674DT , PE6A4BA , PE6A6BA .
History: CHM6561QGP
Keywords - PE5F7EA MOSFET datasheet
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History: CHM6561QGP



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