PE5G5EA Specs and Replacement

Type Designator: PE5G5EA

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 59 nS

Cossⓘ - Output Capacitance: 188 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: PDFN3X3P

PE5G5EA substitution

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PE5G5EA datasheet

 ..1. Size:402K  niko-sem
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PE5G5EA

P-Channel Logic Level Enhancement Mode PE5G5EA NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 16m -30A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. G. GA... See More ⇒

Detailed specifications: PE561BA, PE597BA, PE5B1DZ, PE5B5DX, PE5B7BA, PE5C6JZ, PE5E6BA, PE5F7EA, IRF830, PE5M6EA, PE5Q8JZ, PE5V6BA, PE609CA, PE674DT, PE6A4BA, PE6A6BA, PE6D2DX

Keywords - PE5G5EA MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs