All MOSFET. PE5G5EA Datasheet

 

PE5G5EA Datasheet and Replacement


   Type Designator: PE5G5EA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 13 nC
   tr ⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 188 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: PDFN3X3P
 

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PE5G5EA Datasheet (PDF)

 ..1. Size:402K  niko-sem
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PE5G5EA

P-Channel Logic Level Enhancement Mode PE5G5EA NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 16m -30A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. G. GA

Datasheet: PE561BA , PE597BA , PE5B1DZ , PE5B5DX , PE5B7BA , PE5C6JZ , PE5E6BA , PE5F7EA , IRF830 , PE5M6EA , PE5Q8JZ , PE5V6BA , PE609CA , PE674DT , PE6A4BA , PE6A6BA , PE6D2DX .

History: KP809G1

Keywords - PE5G5EA MOSFET datasheet

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