PE674DT Specs and Replacement

Type Designator: PE674DT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 19 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 31 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48 nS

Cossⓘ - Output Capacitance: 129 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: PDFN3X3S

PE674DT substitution

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PE674DT datasheet

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PE674DT

Dual N-Channel Enhancement Mode PE674DT NIKO-SEM Field Effect Transistor PDFN 3x3S Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1 G1 Q2 30V 7m 39A 2,3,4 D1 5,6,7 S2 8 G2 Q1 30V 10.5m 31A 9 S1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage VDS 30 30 V... See More ⇒

Detailed specifications: PE5C6JZ, PE5E6BA, PE5F7EA, PE5G5EA, PE5M6EA, PE5Q8JZ, PE5V6BA, PE609CA, K2611, PE6A4BA, PE6A6BA, PE6D2DX, PE6R8DX, PE6W2EA, PE6W8DX, PE848DU, PE854DT

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