All MOSFET. PE674DT Datasheet

 

PE674DT Datasheet and Replacement


   Type Designator: PE674DT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 19 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 31 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 129 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: PDFN3X3S
 

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PE674DT Datasheet (PDF)

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PE674DT

Dual N-Channel Enhancement Mode PE674DT NIKO-SEM Field Effect Transistor PDFN 3x3S Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1 : G1 Q2 30V 7m 39A 2,3,4 : D1 5,6,7 : S2 8 : G2 Q1 30V 10.5m 31A 9 : S1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage VDS 30 30 V

Datasheet: PE5C6JZ , PE5E6BA , PE5F7EA , PE5G5EA , PE5M6EA , PE5Q8JZ , PE5V6BA , PE609CA , IRF9640 , PE6A4BA , PE6A6BA , PE6D2DX , PE6R8DX , PE6W2EA , PE6W8DX , PE848DU , PE854DT .

History: SIHFP9140 | BUK7614-55 | SLD80R850SJ | 2SK1024 | CSFR3N60U | RJK6015DPM | PKCE9BB

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