All MOSFET. PE6W2EA Datasheet

 

PE6W2EA Datasheet and Replacement


   Type Designator: PE6W2EA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 19 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: PDFN3X3P
 

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PE6W2EA Datasheet (PDF)

 ..1. Size:415K  niko-sem
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PE6W2EA

N-Channel Enhancement Mode PE6W2EA NIKO-SEM Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 18m 24A Features ESD Protected Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Gate Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses.

Datasheet: PE5Q8JZ , PE5V6BA , PE609CA , PE674DT , PE6A4BA , PE6A6BA , PE6D2DX , PE6R8DX , AO3407 , PE6W8DX , PE848DU , PE854DT , PE898BA , PE8A8BA , PE8B0BA , PE8C2BA , PE8D8BA .

History: IPD053N08N3G

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