PE6W8DX Datasheet and Replacement
Type Designator: PE6W8DX
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 19.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 91 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: PDFN3X3P
PE6W8DX substitution
PE6W8DX Datasheet (PDF)
pe6w8dx.pdf
Dual N-Channel Enhancement Mode PE6W8DX NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 20m 20A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. D1 D1 D2 D2 Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Ap
Datasheet: PE5V6BA , PE609CA , PE674DT , PE6A4BA , PE6A6BA , PE6D2DX , PE6R8DX , PE6W2EA , 60N06 , PE848DU , PE854DT , PE898BA , PE8A8BA , PE8B0BA , PE8C2BA , PE8D8BA , PECH1EU .
History: FS70KM-2
Keywords - PE6W8DX MOSFET datasheet
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: FS70KM-2
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