All MOSFET. PE6W8DX Datasheet

 

PE6W8DX Datasheet and Replacement


   Type Designator: PE6W8DX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 19.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 91 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: PDFN3X3P
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PE6W8DX Datasheet (PDF)

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PE6W8DX

Dual N-Channel Enhancement Mode PE6W8DX NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 20m 20A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. D1 D1 D2 D2 Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Ap

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History: STU6NF10 | IXTT26N50P | APT18M80B | HUF75645S3S | SSF3092G1 | SI2312A | TPCA8080

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