PE848DU Specs and Replacement

Type Designator: PE848DU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 294 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: PDFN3.3X3.3S

PE848DU substitution

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PE848DU datasheet

 ..1. Size:954K  niko-sem
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PE848DU

Dual N-Channel Enhancement Mode PE848DU NIKO-SEM Field Effect Transistor PDFN 3.3x3.3S Halogen-Free & Lead-Free 1. PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 30V 5.8m 18A Q1 30V 4.2m 21A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switc... See More ⇒

Detailed specifications: PE609CA, PE674DT, PE6A4BA, PE6A6BA, PE6D2DX, PE6R8DX, PE6W2EA, PE6W8DX, IRFP064N, PE854DT, PE898BA, PE8A8BA, PE8B0BA, PE8C2BA, PE8D8BA, PECH1EU, PECJ1EU

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs