All MOSFET. PE848DU Datasheet

 

PE848DU Datasheet and Replacement


   Type Designator: PE848DU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 294 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: PDFN3.3X3.3S
 

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PE848DU Datasheet (PDF)

 ..1. Size:954K  niko-sem
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PE848DU

Dual N-Channel Enhancement Mode PE848DU NIKO-SEM Field Effect Transistor PDFN 3.3x3.3S Halogen-Free & Lead-Free 1. PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 30V 5.8m 18A Q1 30V 4.2m 21A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switc

Datasheet: PE609CA , PE674DT , PE6A4BA , PE6A6BA , PE6D2DX , PE6R8DX , PE6W2EA , PE6W8DX , 5N50 , PE854DT , PE898BA , PE8A8BA , PE8B0BA , PE8C2BA , PE8D8BA , PECH1EU , PECJ1EU .

History: IRFP251 | HAF1001 | BLP12N10G-P

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