All MOSFET. PE854DT Datasheet

 

PE854DT Datasheet and Replacement


   Type Designator: PE854DT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 324 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: PDFN3X3S
 

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PE854DT Datasheet (PDF)

 ..1. Size:561K  niko-sem
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PE854DT

Dual N-Channel Enhancement Mode PE854DT NIKO-SEM Field Effect Transistor PDFN 3x3S Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 30V 6.5m 43A Q1 30V 8m 35A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Optimized Gate Charge to Minimize Switching Losses. 100% UIS and Rg Tested. 1 : G

Datasheet: PE674DT , PE6A4BA , PE6A6BA , PE6D2DX , PE6R8DX , PE6W2EA , PE6W8DX , PE848DU , IRFP064N , PE898BA , PE8A8BA , PE8B0BA , PE8C2BA , PE8D8BA , PECH1EU , PECJ1EU , PEE28BB .

History: 2SK2545

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