PE854DT Specs and Replacement

Type Designator: PE854DT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 17 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 324 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: PDFN3X3S

PE854DT substitution

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PE854DT datasheet

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PE854DT

Dual N-Channel Enhancement Mode PE854DT NIKO-SEM Field Effect Transistor PDFN 3x3S Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 30V 6.5m 43A Q1 30V 8m 35A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Optimized Gate Charge to Minimize Switching Losses. 100% UIS and Rg Tested. 1 G... See More ⇒

Detailed specifications: PE674DT, PE6A4BA, PE6A6BA, PE6D2DX, PE6R8DX, PE6W2EA, PE6W8DX, PE848DU, AO4468, PE898BA, PE8A8BA, PE8B0BA, PE8C2BA, PE8D8BA, PECH1EU, PECJ1EU, PEE28BB

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