All MOSFET. PE8C2BA Datasheet

 

PE8C2BA Datasheet and Replacement


   Type Designator: PE8C2BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 19 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: PDFN3X3P
 

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PE8C2BA Datasheet (PDF)

 ..1. Size:403K  niko-sem
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PE8C2BA

N-Channel Enhancement Mode PE8C2BA NIKO-SEM Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D40V 9.5m 33A GFeatures S Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. D D D DG.

Datasheet: PE6R8DX , PE6W2EA , PE6W8DX , PE848DU , PE854DT , PE898BA , PE8A8BA , PE8B0BA , IRF740 , PE8D8BA , PECH1EU , PECJ1EU , PEE28BB , PEE50BB , PF515BM , PF5B3BA , PF5G3EA .

History: MTN2510E3 | CSD19534KCS | PF5G3EA | DHF85N08 | PM5Q2EA | PKCD0BB | 2SK4202-S19-AY

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