PE8C2BA Specs and Replacement

Type Designator: PE8C2BA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 19 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 53 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm

Package: PDFN3X3P

PE8C2BA substitution

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PE8C2BA datasheet

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PE8C2BA

N-Channel Enhancement Mode PE8C2BA NIKO-SEM Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D 40V 9.5m 33A G Features S Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. D D D D G. ... See More ⇒

Detailed specifications: PE6R8DX, PE6W2EA, PE6W8DX, PE848DU, PE854DT, PE898BA, PE8A8BA, PE8B0BA, IRF740, PE8D8BA, PECH1EU, PECJ1EU, PEE28BB, PEE50BB, PF515BM, PF5B3BA, PF5G3EA

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