PECJ1EU Specs and Replacement
Type Designator: PECJ1EU
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 82 nS
Cossⓘ - Output Capacitance: 423 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: PDFN3.3X3.3S
PECJ1EU substitution
- MOSFET ⓘ Cross-Reference Search
PECJ1EU datasheet
Detailed specifications: PE848DU, PE854DT, PE898BA, PE8A8BA, PE8B0BA, PE8C2BA, PE8D8BA, PECH1EU, IRF540N, PEE28BB, PEE50BB, PF515BM, PF5B3BA, PF5G3EA, PF608BA, PG1010BD, PG1010BK
Keywords - PECJ1EU MOSFET specs
PECJ1EU cross reference
PECJ1EU equivalent finder
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PECJ1EU substitution
PECJ1EU replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: FDB44N25TM
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MOSFET: AUW033N08BG | AUW025N10 | AUR030N10 | AUR020N10 | AUR020N085 | AUR014N10 | AUP074N10 | AUP065N10 | AUP062N08BG | AUP060N08AG
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