PECJ1EU Specs and Replacement

Type Designator: PECJ1EU

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 82 nS

Cossⓘ - Output Capacitance: 423 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: PDFN3.3X3.3S

PECJ1EU substitution

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PECJ1EU datasheet

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PECJ1EU

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Detailed specifications: PE848DU, PE854DT, PE898BA, PE8A8BA, PE8B0BA, PE8C2BA, PE8D8BA, PECH1EU, IRF540N, PEE28BB, PEE50BB, PF515BM, PF5B3BA, PF5G3EA, PF608BA, PG1010BD, PG1010BK

Keywords - PECJ1EU MOSFET specs

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