All MOSFET. PG3510HEA Datasheet

 

PG3510HEA Datasheet and Replacement


   Type Designator: PG3510HEA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 17.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 77 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: PDFN3X3P
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PG3510HEA Datasheet (PDF)

 ..1. Size:416K  niko-sem
 pg3510hea.pdf pdf_icon

PG3510HEA

PG3510HEA N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 35m 15A D1 D1 D2 D2G. GATE D. DRAIN S. SOURCE 100% UIS Tested #1 S1 G1 S2 G2100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source

 9.1. Size:25K  panasonic
 2pg351.pdf pdf_icon

PG3510HEA

IGBTs 2PG3512PG351Insulated Gate Bipolar TransistorUnit : mm Features7.0 0.3 3.5 0.2 High breakdown voltage : VCES= 400V3.0 0.2 Large current control possible : IC(peak)=130A Housing in the surface mounting package possible Applications1.1 0.1 0.85 0.1 For camera flash-light 0.75 0.1 0.4 0.12.3 0.24.6 0.4 Absolute Maximum Ratings (Tc = 25C)1 2

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History: IRFBG20 | DMN2300UFB4 | DMP2104LP | TK2P60D | DMN60H3D5SK3

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