PG3510HEA Specs and Replacement

Type Designator: PG3510HEA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 17.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 77 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: PDFN3X3P

PG3510HEA substitution

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PG3510HEA datasheet

 ..1. Size:416K  niko-sem
 pg3510hea.pdf pdf_icon

PG3510HEA

PG3510HEA N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 35m 15A D1 D1 D2 D2 G. GATE D. DRAIN S. SOURCE 100% UIS Tested #1 S1 G1 S2 G2 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source... See More ⇒

 9.1. Size:25K  panasonic
 2pg351.pdf pdf_icon

PG3510HEA

IGBTs 2PG351 2PG351 Insulated Gate Bipolar Transistor Unit mm Features 7.0 0.3 3.5 0.2 High breakdown voltage VCES= 400V 3.0 0.2 Large current control possible IC(peak)=130A Housing in the surface mounting package possible Applications 1.1 0.1 0.85 0.1 For camera flash-light 0.75 0.1 0.4 0.1 2.3 0.2 4.6 0.4 Absolute Maximum Ratings (Tc = 25 C) 1 2... See More ⇒

Detailed specifications: PF5B3BA, PF5G3EA, PF608BA, PG1010BD, PG1010BK, PG2910BD, PG2910BEA, PG2910BK, IRFB4227, PG8E10AF, PG8E10AK, PI504BZ, PI517BZ, PI5B3BA, PJ527BA, PJ601CA, PJ611CA

Keywords - PG3510HEA MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs