PG8E10AF Specs and Replacement

Type Designator: PG8E10AF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48 nS

Cossⓘ - Output Capacitance: 293 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO-220F

PG8E10AF substitution

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PG8E10AF datasheet

 ..1. Size:251K  niko-sem
 pg8e10af.pdf pdf_icon

PG8E10AF

N-Channel Enhancement Mode PG8E10AF NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID 100V 8.5m 47A 1. GATE G 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC ... See More ⇒

 7.1. Size:295K  niko-sem
 pg8e10ak.pdf pdf_icon

PG8E10AF

N-Channel Enhancement Mode PG8E10AK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free D D D D D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 100V 8.2m 69A G. GATE D. DRAIN S. SOURCE #1 S S S G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Vo... See More ⇒

Detailed specifications: PF5G3EA, PF608BA, PG1010BD, PG1010BK, PG2910BD, PG2910BEA, PG2910BK, PG3510HEA, IRF3710, PG8E10AK, PI504BZ, PI517BZ, PI5B3BA, PJ527BA, PJ601CA, PJ611CA, PJ616CA-T

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