All MOSFET. PG8E10AF Datasheet

 

PG8E10AF Datasheet and Replacement


   Type Designator: PG8E10AF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 293 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-220F
 

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PG8E10AF Datasheet (PDF)

 ..1. Size:251K  niko-sem
 pg8e10af.pdf pdf_icon

PG8E10AF

N-Channel Enhancement Mode PG8E10AF NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY DV(BR)DSS RDS(ON) ID 100V 8.5m 47A 1. GATE G2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC

 7.1. Size:295K  niko-sem
 pg8e10ak.pdf pdf_icon

PG8E10AF

N-Channel Enhancement Mode PG8E10AK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 8.2m 69A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Vo

Datasheet: PF5G3EA , PF608BA , PG1010BD , PG1010BK , PG2910BD , PG2910BEA , PG2910BK , PG3510HEA , P55NF06 , PG8E10AK , PI504BZ , PI517BZ , PI5B3BA , PJ527BA , PJ601CA , PJ611CA , PJ616CA-T .

History: IXTH60N15 | MTN40N03J3 | IXTH48P20P | PKEA6EB | PM5Q2EA | PKCD0BB | NP84N04KHE

Keywords - PG8E10AF MOSFET datasheet

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