PI504BZ Datasheet and Replacement
Type Designator: PI504BZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 47 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 157 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO-251
PI504BZ substitution
PI504BZ Datasheet (PDF)
pi504bz.pdf

N-Channel Enhancement Mode PI504BZNIKO-SEM TO-251(IS) Field Effect Transistor Halogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G2. DRAIN 30V 9m 47A 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 30 VGate-Source Voltage VGS 20 VTC = 25 C
Datasheet: PG1010BD , PG1010BK , PG2910BD , PG2910BEA , PG2910BK , PG3510HEA , PG8E10AF , PG8E10AK , P55NF06 , PI517BZ , PI5B3BA , PJ527BA , PJ601CA , PJ611CA , PJ616CA-T , PK555BA , PK5A7BA .
History: IPN60R600PFD7S
Keywords - PI504BZ MOSFET datasheet
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History: IPN60R600PFD7S



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