All MOSFET. PI504BZ Datasheet

 

PI504BZ Datasheet and Replacement


   Type Designator: PI504BZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 157 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-251
 

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PI504BZ Datasheet (PDF)

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PI504BZ

N-Channel Enhancement Mode PI504BZNIKO-SEM TO-251(IS) Field Effect Transistor Halogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G2. DRAIN 30V 9m 47A 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 30 VGate-Source Voltage VGS 20 VTC = 25 C

Datasheet: PG1010BD , PG1010BK , PG2910BD , PG2910BEA , PG2910BK , PG3510HEA , PG8E10AF , PG8E10AK , IRFB4110 , PI517BZ , PI5B3BA , PJ527BA , PJ601CA , PJ611CA , PJ616CA-T , PK555BA , PK5A7BA .

History: AM2398NE | ES9435 | SI2323DDS | UTT6NP10G-S08-R | SIA537EDJ | IRF3709ZL | QM2N7002E3K1

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