All MOSFET. PK555BA Datasheet

 

PK555BA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PK555BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 19 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.8 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 134 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: PDFN5X6P

 PK555BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PK555BA Datasheet (PDF)

 ..1. Size:325K  niko-sem
 pk555ba.pdf

PK555BA PK555BA

PK555BA P-Channel Logic Level Enhancement Mode NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free DD1 D1 D1 D1PRODUCT SUMMARY V(BR)DSS RDS(ON) ID GG : GATE -30V 28m -19A D : DRAIN S : SOURCE #1 S1 S1 S1 G1SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -3

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: RFG75N05E

 

 
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