PK5V8EN Specs and Replacement

Type Designator: PK5V8EN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 171 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 96 nS

Cossⓘ - Output Capacitance: 1170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm

Package: PDFN5X6PX

PK5V8EN substitution

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PK5V8EN datasheet

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PK5V8EN

N-Channel Enhancement Mode PK5V8EN NIKO-SEM Field Effect Transistor PDFN 5x6PX Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 1.9m 171A ESD Protected Gate Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. D D D D Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switchi... See More ⇒

Detailed specifications: PK5B9BA, PK5C1BA, PK5E4BA, PK5G3EA, PK5H3EN, PK5L4BA, PK5M6EA, PK5V6BA, IRFP260, PK5X8BA, PK601CA, PK609CA, PK626HY, PK676BA, PK6A8BA, PK6B0SA, PK6M6DX

Keywords - PK5V8EN MOSFET specs

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